大功率分(fēn)立器件
峰值功率20W-1000W； 工作(zuò)頻率10MHz-6GHz；基于自主知識産權的28V，50V LDMOS和GaN工藝平台開發 全國(guó)産供應； 封裝(zhuāng)材料自主開發設計，具有低成本、高可(kě)靠性。
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産品型号
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Min. Freq
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Max. Freq
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VDD
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Pavg(dBm)
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DE@Pavg
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Gain(dB)
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ACPR (dBc)
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Test Freq.(MHz)
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MP Status
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Package
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Process
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|---|---|---|---|---|---|---|---|---|---|---|---|
| HTH8G09P550S | 700 MHz | 960 MHz | 48 V | 49 | 53.40% | 20.4 | -28.8 | 758 | MP | ACC2110S-4L | LDMOS |
| HTH9G09P550S | 700 MHz | 960 MHz | 48 V | 49 | 54% | 20 | -25 | 945 | MP | ACS2110S-4L | LDMOS |
| HTH9G09P700S | 758 MHz | 803 MHz | 48 V | 50.5 | 56% | 19.5 | -25 | 780 | MP | ACS3210S-4L | LDMOS |
| HTN9G22P370S | 1805 MHz | NA | 28 V | 47.3 | 48% | 16 | -30 | 2140 | MP | ACS2110S-4L | LDMOS |
| HTN7G21S040P(G) | 700 MHz | 2100 MHz | 28 V | 36 | 15.40% | 15.4 | -48 | 1800 | MP | TO-270 | LDMOS |
| HTN7G38S007P | 700 MHz | 3800 MHz | 28 V | 28.8 | 17.4% | 14.2 | -47.1 | 3400 | MP | PDFN5*5 | LDMOS |
| HTN8G27S015P | 700 MHz | 2700 MHz | 28 V | 30 | 12% | 20.2 | -49.5 | 2600 | MP | PDFN5*5 | LDMOS |
| HTN8G36S015P | 3300 MHz | 3600 MHz | 28 V | 30 | 11.9% | 18.2 | -48.9 | 3450 | MP | PDFN5*5 | LDMOS |
| HTN9G49S007P | 4800 MHz | 4900 MHz | 24 V | 28.8 | 15% | 15.2 | -45 | 4800 | MP | DFN5*5 | LDMOS |
| HTN7G09S060P | 100 MHz | 960 MHz | 28 V | 39 | 19.5% | 21.8 | -46.3 | 940 | MP | TO-270 | LDMOS |
| HTH1D27P550S | 2496 MHz | 2690 MHz | 48 V | 49 | 56.30% | 15.7 | -26.8 | 2496 | MP | ACS2110S-4L2L | GaN |
